4-82-725
| 规格 | 目录价格 | 上海 | 安徽 | 武汉 | 成都 | 北方 | 深圳 | 会员价格 | 数量 |
|---|---|---|---|---|---|---|---|---|---|
| 5g | ￥ ĆƳńǀǀ | -- | -- | -- | -- | -- | -- | ￥ ĆƳńǀǀ | - + |
| g | ￥ ƍǀńǀǀ | -- | -- | -- | -- | -- | -- | ￥ ƍǀńǀǀ | - + |
| 25g | ￥ ƳŸǀńǀǀ | -- | -- | -- | -- | -- | -- | ￥ ƳŸǀńǀǀ | - + |
| g | ￥ ŸŜŸńǀǀ | -- | -- | -- | -- | -- | -- | ￥ ŸŜŸńǀǀ | - + |
| 5g | ￥ ȄƍŸǀńǀǀ | -- | -- | -- | -- | -- | -- | ￥ ȄƍŸǀńǀǀ | - + |
| g | 请询价 | -- | -- | -- | -- | -- | -- | -- | - + |
| 大货 | 请询价 | -- | -- | -- | -- | -- | -- | -- | - + |
56.87
[]. Adrien Mekki-Berrada, et al. Design of amphoteric mixed oxides of zinc and Group 3 elements (Al, Ga, In): migration effects on basic features. Phys Chem Chem Phys. 22 Mar 28;4(2):455-6.
[2]. Christian A Nijhuis, et al. A molecular half-wave rectifier. J Am Chem Soc. 2 Oct 5;33(39):5397-4.
[3]. Feng Shi, et al. Synthesis and characterization of beta-Ga2O3 nanorod array clumps by chemical vapor deposition. J Nanosci Nanotechnol. 22 Nov;2():848-6.
[4]. J B Varley, et al. Hydrogenated cation vacancies in semiconducting oxides. J Phys Condens Matter. 2 Aug 24;23(33):33422.
[5]. Jae-Hong Jeon, et al. Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor. J Nanosci Nanotechnol. 23 Nov;3():7535-9.
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