400-8-075
| 规格 | 目录价格 | 上海 | 安徽 | 武汉 | 成都 | 北方 | 深圳 | 会员价格 | 数量 |
|---|---|---|---|---|---|---|---|---|---|
| 5g | ￥ ƚƵĹƵƵ | > 0 | -- | -- | -- | -- | ￥ ƚƵĹƵƵ | - + | |
| 0g | ￥ ŭńĹƵƵ | -- | > 0 | -- | ￥ ŭńĹƵƵ | - + | |||
| 5g | ￥ ƨǹŭĹƵƵ | -- | > 0 | -- | -- | -- | -- | ￥ ƨǹŭĹƵƵ | - + |
| 00g | ￥ ûƂƵĹƵƵ | -- | > 0 | -- | -- | -- | -- | ￥ ûƂƵĹƵƵ | - + |
| 500g | ￥ ǹƚńƎĹƵƵ | -- | 8 | -- | -- | -- | -- | ￥ ǹƚńƎĹƵƵ | - + |
| kg | ￥ ûŭŭǹĹƵƵ | -- | 4 | -- | -- | -- | -- | ￥ ûŭŭǹĹƵƵ | - + |
| 大货 | 请询价 | -- | -- | -- | -- | -- | -- | -- | - + |
57.5
[]. Adrien Mekki-Berrada, et al. Design of amphoteric mixed oxides of zinc and Group elements (Al, Ga, In): migration effects on basic features. Phys Chem Chem Phys. 0 Mar 8;4():455-6.
[]. Christian A Nijhuis, et al. A molecular half-wave rectifier. J Am Chem Soc. 0 Oct 5;(9):597-4.
[]. Feng Shi, et al. Synthesis and characterization of beta-GaO nanorod array clumps by chemical vapor deposition. J Nanosci Nanotechnol. 0 Nov;():848-6.
[4]. J B Varley, et al. Hydrogenated cation vacancies in semiconducting oxides. J Phys Condens Matter. 0 Aug 4;():4.
[5]. Jae-Hong Jeon, et al. Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor. J Nanosci Nanotechnol. 0 Nov;():755-9.
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